Emitter Turn-off Thyristor (ETO) - A High Power Semiconductor Switch

  Chaudhari Krunal R.

In today’s electric power system, solid state power electronics technology plays more and more important roles and the demand for mega-watt level power ratings is increasing. The development of mega-watt power converters strongly depends on the state-of-the-art of power semiconductor technology. The Emitter Turn-off Thyristor (ETO) is a new emerging high power semiconductor switch which combines the advantages of Gate Turn-off Thyristor’s (GTO) high voltage and current capability and MOS easy gate control. Its superior control characteristics combined with its high speed, wider RBSOA, higher controllable maximum current, forward current saturation capability, its on-device current sensing and low cost make the ET0 the most promising power device in high power, smart control applications. Future, ETO switches under development will also pack with additional features that no-competing technologies offer, including built-in voltage, current and temperature sensing capability, control-power self-generation capability and high-voltage current saturation capability. These capabilities make ETO a very promising power semiconductor device to reduce the cost of converter-based transmission controllers while improving the controller output power, dynamic performance, and operating reliability.

Keywords- Semi Conductor Switches, ETO, GTO, IGBT, IGCT

Unique Identification Number - IJEDR1501035
Page Number(s) - 176-185
Pubished in - Volume 3 | Issue 1 | Jan 2015
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)

  Chaudhari Krunal R.,   "Emitter Turn-off Thyristor (ETO) - A High Power Semiconductor Switch", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.3, Issue 1, pp.176-185, Jan 2015, Available at :http://www.ijedr.org/papers/IJEDR1501035.pdf